Fault isolation and failure analysis for Si related issues in microelectronic packages need non-destructive and high resolution techniques to reduce the analysis time. This paper illustrates non-destructive and high resolution CSAM techniques, which are shown to be very effective in subtle thin film defect and die edge defect CSAM imaging.

C-mode scanning acoustic microscope , failure analysis, fault isolation, microelectronic packages, silicon
This content is only available as a PDF.
Copyright © 2013 ASM International. All rights reserved.
2013
ASM International
Topics
Electronic packaging C-mode scanning acoustic microscopy Semiconductor wafer fabrication Silicon
Issue Section:
Poster Session
You do not currently have access to this content.