Abstract

High gate to source/drain (S/D) leakage was observed at both failed pins and ET structures with random failure signatures. Detailed TEM failure analysis revealed an abnormal thin Nitrogen-rich nitride layer along the poly gate which extended to the S/D regions. Along the abnormal nitride layer, appreciable Arsenic (As) segregation occurred. The segregated As dopants at these interfaces may form a continuous conducting path, accounting for the gate to S/D leakage mechanism. The preferable As segregation at the Silicon nitride interface may be related to a vacancy-assisted As diffusion process.

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