Lock-in IR-OBIRCH analysis, as a kind of static thermal laser stimulation (S-TLS) technique, is very effective to isolate a fault for the parametric failure cases. However, its capability is limited to localize a defect when the IC is operated under a defined operating condition. Whereas the dynamic thermal laser stimulation (D-TLS) technique is good at locating a fault while the IC is operated under some functions to activate the failure. In this paper, a novel method is presented to realize DTLS just by Lock-in IR-OBIRCH assisted with a Current Detection Probe Head. Two cases are studied to demonstrate the effectiveness of this method.