Device Characterization Using AFP Nanoprobing for the Localization of New Product Design Weakness Available to Purchase

This paper illustrated the beauty of AFP nano-probing as the critical failure analysis tool in localizing new product design weakness. A 40nm case of HTOL Pin Leakage due to Source/Drain punch-through at a systematic location was discussed. The root cause and mechanism was due to VDS overdrive testing issue. This paper placed a strong emphasis on systematic problem solving approach, deep dive and use of right FA approach/tool that are essentially critical to FA analysts in wafer foundry since there is always minimal available data provided. It would serve as a good reference to wafer Fab that encountered such issue.