Abstract

As the rapid developments of semiconductor manufacturing technologies, the CD of the device keep shrinking. The IC devices have a smaller feature sizes and higher densities, and thus there are many challenges come up in terms of the failure analysis and localized device characterization. Besides the challenge of smaller feature size, there is another challenge as well. Some of the traditional FA method can no longer be employed on advanced technologies, such as 28nm and beyond. Quickly and successfully isolating the failed location and obtaining electrical signature of the defect has become more of a challenge, especially for the device level analysis and characterization. AFP nanoprobing system provides some solutions to advanced nodes fault isolation through its AFM imaging mode of CAFM.

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