Two-Photon-Absorption-Enhanced Laser-Assisted Device Alteration and Single-Event Upsets in 28 nm Silicon Integrated Circuits

By inducing two-photon absorption within the active layer of a 28nm test chip, we demonstrate nonlinear laser-assisted device alteration and single-event upsets by temporarily perturbing the timing characteristics of sensitive transistors. Individual qualitative and quantitative evaluations are presented for both techniques, with lateral resolutions demonstrated with sub-100nm performance. A simplistic signal response rate comparison analysis of these two technologies is also presented.