In the context of the increasing complexity of materials used in semiconductor device processes, the STEM EDX technique is now used routinely. It can be used to discriminate stacked layers in advanced devices where STEM HAADF Z-contrast is not sufficient. Moreover, it allows a new use of planar preparation for layer investigation. The complexity of analyzed structures drives a need for 3D information which can also be obtained with the chemical information of the EDX analysis.

energy dispersive X-ray spectroscopy, failure analysis, scanning transmission electron microscopy, semiconductor device process
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Copyright © 2013 ASM International. All rights reserved.
2013
ASM International
Topics
Scanning transmission electron microscopy Semiconductor wafer fabrication Energy dispersive X-ray spectroscopy
Issue Section:
In-Line Metrology and Inspection
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