Abstract

Pulsed Laser Assisted Chemical Etching (PLACE) is an advanced method of surface preparation that etches backside silicon to ultra-thin remaining layer thickness for Focused Ion Beam (FIB) circuit edit and failure analysis of Wafer Level Packages (WLP). PLACE can achieve ultra-high purity and fine dimensional control since it is a dry process relying on pyrolytic vapor phase reactions initiated, and constrained, by a pulsed laser.

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