In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

copper, electron backscatter diffraction, failure analysis, grain structure, microstructure, plasma focused ion beam milling, through-silicon vias, transmission electron microscopy
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Copyright © 2012 ASM International. All rights reserved.
2012
ASM International
Topics
Specimen preparation Semiconductor wafer fabrication Copper
Issue Section:
Test, Diagnostics, and Yield Enhancement
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