A new method and grid design is described for implementation of ex-situ lift-out of FIB prepared specimens. This technique negates all prior disadvantages to ex-situ liftout and provides a method for higher throughput and rethinning of ex-situ specimens. In particular, this method allows for easy, fast, and routine manipulation for subsequent backside FIB milling and analysis.

failure analysis, focused ion beam milling, specimen preparation
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Copyright © 2012 ASM International. All rights reserved.
2012
ASM International
Topics
Specimen preparation Semiconductor wafer fabrication
Issue Section:
Sample Preparation
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