A case study of Fluorine (F)-outgassing is presented in this paper that caused the corrosion of Aluminum bond pad. It will be shown that the source of F-contamination is not the typical residue left behind after the passivation etch with Fluorine-based gas chemistry and the subsequent removal of the etch polymer generated with solvent (chemical) clean. Rather, it is introduced as a result of F-outgas over a period of time from the intermetallic dielectric (IMD) film, fluorosilicate glass (FSG), during the post-fab wafer storage. The methodology used in our failure analysis (FA) lab to identify and characterize this type of failure mode is presented in the paper.

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