Abstract

In this study, the challenges to transfer the microelectronics failure analysis techniques to the photovoltaic industry have been discussed. The main focus of this study was the PHEMOS as a tool with strong technological research capacity developed for microelectronics failure analysis, and OBIC (Optical Beam Induced Current) as a non-destructive technique for detecting and localizing various defects in semiconductor devices. This failure analysis tool was a high resolution optical infrared photon emission microscope used mainly in microelectronics for qualitative analysis and localization of semiconductor defects. Such failure analysis equipment was designed to meet requirements for modern microelectronic devices. Characterization of current photovoltaic device often requires quantitative analysis and should provide information about the electrical and material properties of the solar cell. Therefore, in addition to the demand for further data processing of the obtained results we had to study the corresponding operating regime of solar cells to allow for a correct interpretation of measurement results. In this paper, some of the related problems we faced during this study, e.g. large amount of data processing, the spatial misalignment of the images obtained as EL (Electroluminescence) and IR-LBIC (Infrared Light Beam Induced Current), the implemented laser wavelength, its profile and power density for IR-LBIC measurement. These topics have been discussed in detailed to facilitate a reliable transfer of these techniques from microelectronics to the photovoltaic world.

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