This paper described a gate oxide failure case which affected the electrical parameters such as Vt and Idsat of both HV N&P MOS. A systematic problem solving approach combined with several FA techniques was applied to find the root-cause to be arsenic outgas cross-contamination.

arsenic contamination, gate oxides, MOS devices, problem solving, root cause analysis
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2012
ASM International
Topics
Semiconductor wafer fabrication Root cause analysis
Issue Section:
Case Studies
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