Abstract
In this work we present spectrally resolved photon emission microscopy (SPEM) measurements for short-channel FETs acquired through the backside of the Si substrate using InGaAs detector. Two spectrum resolution methods have been used: continuous using a prism and discrete using a set of interference band-pass filters. The photon emission (PE) spectra have been corrected for the background / noise of the detector; they have been calibrated with respect to the system optical transmission function and corrected for the absorption on free carriers in the remaining layer of Si substrate. We discuss all the standardization aspects thoroughly as they are crucial in order to obtain correct device-intrinsic PE spectral information. Finally, we present the spectral results for FET devices operated in various operating conditions.
