This paper demonstrated the use of curve fitting method on device transfer characteristic curve for device carrier mobility analysis and failure mechanism verification. In the content, a systematic device characterization was performed to identify device failure mode and failure site. Based on physical observations and electrical results, a device gate oxide boron penetration failure mechanism and an unexpected subtle p-type dopant at p-MOS device channel area was conjectured. However, this unexpected p-type dopant was successfully proved by subsequent carrier mobility analysis results, and the gate oxide boron penetration failure mechanism was accordingly verified.

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