Leaky Device Channel Anomaly Identification and Case Study by Nano-Probing Technique, Curve Fitting, and Model Analysis Available to Purchase

This paper demonstrated the use of curve fitting method on device transfer characteristic curve for device carrier mobility analysis and failure mechanism verification. In the content, a systematic device characterization was performed to identify device failure mode and failure site. Based on physical observations and electrical results, a device gate oxide boron penetration failure mechanism and an unexpected subtle p-type dopant at p-MOS device channel area was conjectured. However, this unexpected p-type dopant was successfully proved by subsequent carrier mobility analysis results, and the gate oxide boron penetration failure mechanism was accordingly verified.