We have demonstrated the sample fabrication by focused ion beam (FIB) milling and delineation etch gas which makes it possible to directly measure resistance in a cross section of semiconductor devices with a nano probe after cell fabrication. With direct evaluation of electrical properties, this technique can help improve semiconductor devices.

cell area, delineation etch gas, electrical properties, focused ion beam milling, nano probe, semiconductor devices
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Copyright © 2011 ASM International. All rights reserved.
2011
ASM International
Topics
Semiconductor wafer fabrication Electrical resistance
Issue Section:
Poster Session
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