Post silicon validation techniques require backside sample preparation by silicon thinning techniques. The conventional fixture to this preparation on large die packages causes silicon to crack. A new “4-point bending” fixture was developed to reduce silicon bending strain during thinning to eliminate silicon cracking. This new fixture and technique improved remaining silicon thickness uniformity as well as process time.

4-point bending, backside sample preparation, die packages, process time, silicon cracking, silicon thinning, stress reduction, thickness
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Copyright © 2011 ASM International. All rights reserved.
2011
ASM International
Topics
Specimen preparation Semiconductor wafer fabrication Silicon
Issue Section:
Poster Session
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