Abstract

In case of power semiconductor analysis, classical failure localization methods are restricted in application due to thick, closed metal layers and high-dose bulk-Si implants, making backside access difficult. Furthermore, defect traces in power semiconductors are often such severe that no conclusive FA is possible anymore. The new roadmap considers these specialties and shows ways how to deal with them, showing ways to conclusive results.

This content is only available as a PDF.
You do not currently have access to this content.