Abstract

We investigate a complementary objective lens design for correcting chromatic aberration in the use of a silicon aplanatic solid immersion lens for back-side photon emission microscopy of metal-oxide-semiconductor circuits. Our simulations demonstrate that the chromatic aberration due to material dispersion of aplanatic silicon solid immersion lenses can be reduced by more than an order of magnitude in the spectral window 1.5µm-2.1µm, providing new diffraction limited performance. On-axis and off-axis imaging performance of the proposed optical design is evaluated.

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