A NOR-type split gate embedded Flash memory product program marginal fail with odd/even word line failure pattern. Based on cell current comparison, programming cycling tests and voltage drop measurements, the invisible cause of even/odd cells weak program failure mechanism was verified and confirmed visibly by cross sectioning and junction stain treatment. This problem was then solved by tightening photo alignment control and exposure conditions.

cell current, odd/even fail pattern failure analysis, photo alignment control tightening, programming cycling tests, split-gate flash memory cell, voltage drop measurements
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Copyright © 2011 ASM International. All rights reserved.
2011
ASM International
Topics
Semiconductor wafer fabrication
Issue Section:
Poster Session
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