We propose in this paper to introduce the L-NEPS (Laser Nano Electro-static field Probe Sensor), which can detect the slight quasi-electrostatic field generated by optical excitation and thermal excitation occurred when laser beam irradiates on the surface and back of the Die of LSI under non-bias and non-contact conditions, as well as the method to locate the failure point with this device. This report explains the principle of quasi-electrostatic field sensing by L-NEPS and the detection mechanism, and also illustrates the effectiveness of this detection method on the basis of analysis data of two examples of LSI failures (ESD breakdown).

This content is only available as a PDF.
You do not currently have access to this content.