A particular failure analysis case where phosphorous contamination occurred in arsenic-implanted Si is presented. Time-of-Flight secondary ion mass spectroscopy (TOF-SIMS) can be used for fast diagnosis of this contamination which shows 300% surface density change relative to the baseline. It is found that the cause of the phosphorous contamination is due to a combination of implanter chamber re-deposit cross contamination and rapid thermal annealing (RTA) process induced drive-in effect.

arsenic-implanted silicon, failure analysis, fast diagnosis, phosphorous contamination, rapid thermal annealing, surface density, time-of-flight secondary ion mass spectroscopy
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Copyright © 2011 ASM International. All rights reserved.
2011
ASM International
Topics
Rapid thermal annealing Time-of-flight secondary ion mass spectrometry Silicon
Issue Section:
Failure Analysis Process
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