Abstract

In this paper, we propose an evaluation method of characteristics variability of MOS transistors in an actual circuit with the nanoprobing technique. Based on the result of correlation with data of a parametric tester, we verified that the nanoprobing had ability for variability evaluations and its precision of is 7 mV in threshold voltage and 0.5 mA in saturation current respectively. As the result of the trial evaluation of variability of SRAM cells in an actual LSI die, we confirmed that variations of threshold voltage and saturation current are normal distributions.

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