Abstract
Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.
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Copyright © 2011 ASM International. All rights reserved.
2011
ASM International
Issue Section:
Advanced Techniques
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