Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

dark field images, failure analysis, geometric phase analysis, local lattice strain measurement, scanning transmission electron microscopy, transistors
This content is only available as a PDF.
Copyright © 2011 ASM International. All rights reserved.
2011
ASM International
Topics
Scanning transmission electron microscopy Semiconductor wafer fabrication
Issue Section:
Advanced Techniques
You do not currently have access to this content.