Abstract

This paper focuses on infrared (IR) thermography capabilities on III-V components for thermal measurements applications and failure analysis (FA). The first part discusses the thermal mapping on InGaAs/AlGaAs PHEMT structure and compares IR thermal measurement with the well-known techniques as Raman and SThM. The second part discusses IR thermography on challenging FA for hot spot detection on the most popular type of capacitor for III-V MMICs as the metal-insulator-metal capacitor. It shows how IR thermography can easily localize very small pinholes in SiN, where liquid crystal and OBIRCH techniques are not well adapted.

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