This paper focuses on infrared (IR) thermography capabilities on III-V components for thermal measurements applications and failure analysis (FA). The first part discusses the thermal mapping on InGaAs/AlGaAs PHEMT structure and compares IR thermal measurement with the well-known techniques as Raman and SThM. The second part discusses IR thermography on challenging FA for hot spot detection on the most popular type of capacitor for III-V MMICs as the metal-insulator-metal capacitor. It shows how IR thermography can easily localize very small pinholes in SiN, where liquid crystal and OBIRCH techniques are not well adapted.

capacitors, failure analysis, hot spot detection, indium gallium arsenides, infrared thermography, monolithic microwave integrated circuits, optical beam induced resistance change, pseudomorphic high electron mobility transistors, scanning thermal microscopy, silicon nitrides
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Copyright © 2011 ASM International. All rights reserved.
2011
ASM International
Topics
Capacitors Microscopy Semiconductor wafer fabrication Infrared thermography
Issue Section:
Sensors, Discretes, and Optoelectronic Devices
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