Abstract

In this paper, we will describe a low yield case which revealed itself as leakage failures near the wafer edge. A systematic problem solving approach was used based on the application of a variety of FA techniques such as electrical curve tracing, Spreading Resistance Probing (SRP), Secondary Ion Mass Spectrometry (SIMS), and Chemical Analysis coupled with extensive Fab investigations. These techniques transformed an invisible defect into a visible one, leading to a full resolution of the issue with good understanding of the failure mechanism and the root cause. We will show that the wafer edge leakage was the result of N-type contamination of the substrate due to Phosphorus outgassing from the V-ring during the high temperature Argon anneal process.

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