The channel of metal-oxide-semiconductor (MOS) transistors at different modes of operation has been characterized using dynamic backside laser reflectance modulation technique for different NMOS and PMOS transistors with different channel lengths. The reflectance modulations contain a primary peak near the drain-end when the MOS transistor is in saturation mode. Comparison studies with a Pseudo-Two-Dimensional analytical model support the hypothesis that the observed peak corresponds to the pinch-off point.

analytical models, dynamic backside reflectance modulation technique, MOS transistors, NMOS transistors, PMOS transistors
This content is only available as a PDF.
Copyright © 2011 ASM International. All rights reserved.
2011
ASM International
Topics
Semiconductor wafer fabrication
Issue Section:
Photon Based Techniques
You do not currently have access to this content.