Abstract
High contact resistance can be caused by moisture absorption in low phosphorus content BPTEOS. Moisture diffused through the TiN glue layer is absorbed by the BPTEOS during subsequent thermal processes resulting in increased contact resistance. This failure mode was studied by combining different failure analysis methods and was confirmed by duplication on experimental wafers.
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Copyright © 2010 ASM International. All rights reserved.
2010
ASM International
Issue Section:
Failure Analysis Process
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