High contact resistance can be caused by moisture absorption in low phosphorus content BPTEOS. Moisture diffused through the TiN glue layer is absorbed by the BPTEOS during subsequent thermal processes resulting in increased contact resistance. This failure mode was studied by combining different failure analysis methods and was confirmed by duplication on experimental wafers.

borophosphorous tetraethyl orthosilicate, contact resistance, dielectric defects, failure mode analysis, moisture absorption, thermal process, titanium nitrides
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Copyright © 2010 ASM International. All rights reserved.
2010
ASM International
Topics
Semiconductor wafer fabrication Contact resistance Failure mode and effects analysis
Issue Section:
Failure Analysis Process
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