Abstract

A new application of the Novel Dielectric Etch solution for FIB Circuit Edit is reported to allow smooth and fast removal of copper dummies/dielectric layers for exposure of the circuitry underneath. Experimental data on the selectivity of the removal of dummies as a function of the ion beam current density is provided. Examples of de-processing several layers to expose a line of interest as well as the exposure of fine copper lines beneath the copper dummies/dielectric layer are presented.

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