This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.

45 nm SOI process, electron beam absorbed current, failure analysis, flip chip, metallization, semiconductor devices
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Copyright © 2010 ASM International. All rights reserved.
2010
ASM International
Topics
Metallization
Issue Section:
Nanoprobing
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