The trends towards 3D integration in microsystems technology and electronic packaging require that failure-analysis methods and target-preparation procedures are adapted to these emerging packaging technologies. The feasibility of laser-target preparation in microsystems is addressed in this paper, especially 3D integrated electronic devices. Various laser technologies were evaluated and the laser of choice was demonstrated to be appropriate for use with stacked packages. In addition, the laser preparation related Heat-Affected Zones (HAZs) were studied. The laser-energy absorption was determined by in situ heating-rate measurement, which enables precise prediction of HAZ extension by the use of Finite Element (FE) simulation. The advantage of this technique for removal rates compared to conventional techniques is discussed, as well as the combination of the excellent ablation rates of pulsed-laser ablation with the high accuracy of Focused Ion Beam (FIB) milling.

electronic devices, electronic packaging, failure analysis, finite element simulation, focused ion beam milling, heat-affected zones, laser preparation, pulsed-laser ablation, three-dimensional integrated circuits
This content is only available as a PDF.
Copyright © 2010 ASM International. All rights reserved.
2010
ASM International
Topics
Heat-affected zone Electronic packaging Specimen preparation Semiconductor wafer fabrication
Issue Section:
Sensors, Discretes, and Optoelectronic Devices
You do not currently have access to this content.