A scanning electron microscopy (SEM) based nano-probing system is used in this study to clarify nickel silicide phase beyond process window. According to the nano-probing measurement result and the cross-sectional transmission electron microscopy (TEM) images, phenomena of junction leakage along with high resistance and a larger nickel silicide area are observed at failure site at the same time. The type of failure mechanism and in-line process issue caused multiple failure phenomena at failure site will be the major focuses in this paper. Nickel silicide phase transformation from NiSi to NiSi2 is highly suspected by the comparison of sheet resistance and silicon consumption. Consequently, nickel silicide beyond process window could be verified immediately.

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