Abstract

Dynamic Laser Stimulation (DLS) techniques proved to be very efficient in soft defect localization bringing a lot of information about the device internal behavior. We need to use external parameter measurements such as frequency, delay, voltage etc to perform these techniques. So they can't be used to study internal signal propagation problems in latched device since signals are resynchronized. We will show that we can use the power analysis coupled with DLS techniques set up to characterize soft defect when we don't have a direct access to monitored signal propagation such as in some transistor transition issues. Laser stimulation in addition of power analysis is used to decrypt security codes in security chip, but in failure analysis it is a new way to reach internal information in order to localize soft defects.

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