Abstract
A novel analytical method applying combined electron beam induced current (EBIC) imaging based on scanning electron microscopy (SEM) and focused ion beam (FIB) cross sectioning in a SEM/FIB dualbeam system is presented. The method is demonstrated in several case studies for process characterization and failure analysis of thin film technology based Solar cells, including Silicon (CSG), Cadmium Telluride (CdTe) and Copper Indium Selenide (CIS) absorbers. While existing techniques such as electro-, photoluminescence spectroscopy and lock-in thermography are able to locate the larger, electrically active defects reasonably fast on a large area, the FIB-SEM EBIC system is uniquely capable of detecting sub-micron, sub-surface defects and of analysing these defects in the same system. In combination with a FIB, the localized region of interest can be easily cross sectioned and additional EBIC analysis can be applied for a three dimensional analysis of the p/n junction.
