Abstract

By inducing two-photon absorption within the device layer of a proprietary silicon test chip, the first nonlinear variant of X-variation mapping is reported by demonstrating frequency mapping of a ring oscillator circuit at 1.55µm.

diode-pumped lasers, failure analysis, integrated circuits, ring oscillators, semiconductor devices, silicon test chips, two-photon absorption, X-variation mapping
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Copyright © 2010 ASM International. All rights reserved.
2010
ASM International
Topics
Semiconductor wafer fabrication Silicon
Issue Section:
Advanced Techniques
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