Abstract
A system-on-chip processor (90 nm technology node) was experiencing a high basic function failure rate. Using a lab-based production tester, laser assisted device alteration, nanoprobing, and physical inspection; the cause of failure was traced to a single faulty P channel transistor. The transistor had been partially subjected to N doping due to poor photo-resist coverage caused by halation.
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Copyright © 2009 ASM International. All rights reserved.
2009
ASM International
Topics
Photolithography
Issue Section:
Failure Analysis Process
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