Defect localization is a very important step in the process of failure analysis for Integrated Circuits. A very important technique, allowing the localization of the defects with a certain degree of precision, is Magnetic Current Imaging. However, this technique has strict limitations related to the working distance and the maximum current magnitude detectable. We overcame these limitations by using a simulation approach, allowing us to sensibly increase the technique resolution and to map currents which are much weaker. This is done by comparing the measurement of the Magnetic Induction Field to a set of simulations of defect assumptions.

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