Abstract

This paper discusses the physics, definitions, and nanoprobing flow of a flash bit memory. In addition, a case study showing the effectiveness of nanoprobing in detecting the Single Bit Fail Data Gain and Data Loss in Flash Memory is also discussed. The paper also includes cases where no passive voltage contrast was observed at the SEM and no leakage was observed at AFM, yet the units failing SBF DG, SBF DL and depletion, were detected by nanoprobing of the single bit. The major finding of this paper is a way to resolve data gain, data loss, and depletion failures of flash memory by nanoprobing procedure, despite no PVC seen at the SEM and no leakage seen at the AFM.

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