Abstract

It is generally accepted that the fault isolation of Vdd short and leakage can be globally addressed by liquid crystal analysis (LCA), photoemission analysis and/or laser stimulating techniques such as OBIRCH or TIVA. However, the hot spot detected by these techniques may be a secondary effect, rather than the exact physical defect location. Further electrical probing with knowledge of the circuit schematic and layout may still be required to pinpoint the exact physical defect location, so that a suitable physical analysis methodology can be chosen to identify the root cause of the failure. This paper has described a thorough analysis process for Vdd leakage failure by a combination of various failure analysis techniques and finally the root cause of the Vdd leakage was identified.

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