Abstract
This paper gives an overview of methods for imaging the distributions of dopant in semiconductor devices. Top view imaging by means of NanoSIMS and chemical etching will be discussed as well as cross section imaging on etched transmission electron microscopy (TEM) lamellas and Scanning Spreading Resistance Microscopy (SSRM).
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Copyright © 2008 ASM International. All rights reserved.
2008
ASM International
Issue Section:
In-Line Metrology and Inspection
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