Failure Analysis of Single Shared Column Fail in DRAM Using Nano-Probing Technique

We report an analysis of a single shared column fail on DRAM technology using a nano-probing technique in this work. The electrical characteristics of the failed transistors show that the column fails were caused by two different failure mechanisms: abnormal contact and implant profiles. We believe that electrical analysis using nano-probing will be a powerful tool for non-visible failure analysis in the future because it is impossible to clearly reveal these two different failure mechanisms solely using physical failure methods.