Abstract

Editing inside an integrated circuit (IC) is critical to debug new devices. Current flipchip circuit edit techniques are limited by spot resolution and chemistry constraints of Focused Ion Beam (FIB) systems. The newly proposed technique for circuit edit (CE) employs FIB to contact circuit nodes directly on transistor level, offering a wide range of applications since it allows accessing every signal on a chip. The general functionality and the influence on chip performance are evaluated for an Intel 65nm process technology.

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