The 2-bit/cell nitride-trapping device (NROM/Nbit) is an important type of NVM (Non-Volatile Memory). The NROM/Nbit is a potential candidate for replacing FG-type NVM devices below the 45nm node. In this study, electrical and physical failure analyses (PFA) were used. The failure mechanisms and root causes of failure for the test vehicle, a 130nm NBit device, were determined. Because cell dimensions and spacing requirements for high-density memory are quite aggressive, these observations help to optimize process and improve yield.

45 nm process, memory cell, nitride-trapping, root cause analysis
This content is only available as a PDF.
Copyright © 2008 ASM International. All rights reserved.
2008
ASM International
Topics
Semiconductor wafer fabrication Root cause analysis
Issue Section:
Poster Session
You do not currently have access to this content.