Abstract

The 2-bit/cell nitride-trapping device (NROM/Nbit) is an important type of NVM (Non-Volatile Memory). The NROM/Nbit is a potential candidate for replacing FG-type NVM devices below the 45nm node. In this study, electrical and physical failure analyses (PFA) were used. The failure mechanisms and root causes of failure for the test vehicle, a 130nm NBit device, were determined. Because cell dimensions and spacing requirements for high-density memory are quite aggressive, these observations help to optimize process and improve yield.

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