Abstract

Two cases of high temperature failure analyses are presented. In both cases an on-chip “heater” – power MOSFET was used to achieve high temperature for both global fault isolation and block/transistor level nodal analysis. The “heater” provides a quick and effective way of changing the device temperature without significantly modifying the bench setup. In both cases, the results show improved probability of successfully isolating the fail site, by performing OBIRCH analysis and nodal analysis.

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