Recent developments in aberration-corrected transmission electron microscopy have drawn much attention from the semiconductor characterization community. Two new developments in transmission electron microscopy, image aberration correctors and probe aberration correctors, are discussed in term of their applications in characterizing gate oxide dielectrics for the IC industry.

failure analysis, gate oxide dielectrics, integrated circuits, semiconductor characterization, transmission electron microscopy
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Copyright © 2008 ASM International. All rights reserved.
2008
ASM International
Topics
Transmission electron microscopy Semiconductor wafer fabrication
Issue Section:
Advanced Techniques
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