We present an analysis of tungsten vias fabricated by a focused ion beam with regard to the understanding of circuit editing strategies. The growth rate of W is ~10 times faster in high aspect ratio vias than on flat surfaces, and W in vias has 4 at. % more C but only one-tenth the Ga of surface-deposited W. We propose that vias act like small Faraday cups, trapping the energy of the Ga+ ions and the reaction byproducts to enhance the growth rate of W and to increase the C to W ratio in vias compared to flat surfaces. The resistivity of W in the vias determined by a least squares fit to resistance data is 250μΩ-cm, unchanged from the resistivity of W deposited on a flat surface. The resistances of the vias fabricated in a SiO2 layer to contact an underlying Al sheet layer fit well to either of two models: 1) an effective area model that invokes resistive via sidewalls that do not participate in conduction, and 2) an contact resistance model that invokes tapered vias with a constricted W/Al contact area.