Spectral analysis of near IR photon emissions was performed on unstrained as well as uniaxial tensile strained nMOSFETs with physical gate length of 60 nm. The significant differences in the observed spectra could be attributed to the strain-induced bandgap narrowing. This shows that photon emission spectroscopy could potentially be used as a tool to monitor strain in the nMOSFET channel.

60 nm process, bandgap narrowing, failure analysis, MOSFETs, near infrared photon emission spectroscopy, silicon, uniaxial tensile strain
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Copyright © 2007 ASM International. All rights reserved.
2007
ASM International
Topics
Semiconductor wafer fabrication Emission spectroscopy Silicon
Issue Section:
Photon Based Techniques
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