The power device has a vertical structure and analysis of defective products generally occurs from the backside because the surface is covered in an aluminum electrode and the backside in a metallic electrode. We will discuss the development of backside 3D analysis technique using defective products that emerged due to the marginal valuation of the power device development. First, it was verified that applying a DC voltage uniformly to the entire backside would be effective in placing a glass with an ITO (Indium Tin Oxide) transparent electrode in contact with the backside; therefore it was able to specify a failure point using the IR-OBIRCH (Infra Red-Optical Beam Induced Resistance CHange) method [1]. Then, a micro-sample was extracted without missing the failure point and observed the 3D perspective method; thus it was clear that existence of crystal lattice defects were thought about as the cause of failure.

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