Abstract

Developed procedures to deposit narrow (<100nm), closely spaced, low resistance conductors which exhibit good electrical isolation are demonstrated. The process parameters which limit how narrow a line can be deposited and the methods used to work-around these are discussed. For these depositions, 3pA ion beam current was used with a Mo(CO)6 precursor chemistry. The deposition method minimized the incorporation of non-conductive precursor by-products. To isolate adjacent conductors, a copper etch Credence FIB chemistry was used. The advantages of this procedure over the common practice when XeF2 chemistry is used is also discussed and demonstrated.

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