The purpose of this paper is to present a systematic analysis methodology for a newly taped-out High Voltage (HV) product that has encountered a 0% yield issue. In order to identify the root cause and improve the yield, a series of electrical analysis experiments designed to reveal the failure phenomenon of the charge-pumping circuit were applied. Combining spice simulation data, I-V curve measurements, CAFM measurements and nano probing, the difference in resistance for a multi-fingered symmetric device was revealed. A deductive method was then used to conduct layout analysis, and an in-line split experiment was developed to explain the failure phenomenon experienced by the multi-fingered HV symmetric device for a charge-pumping circuit.
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Issue Section:Yield Enhancement